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The document describes the Complementary Metal-Oxide-Semiconductor (CMOS) fabrication process. It involves depositing thin layers of various materials like oxide and polysilicon onto a silicon substrate using techniques like oxidation and chemical vapor deposition. Photolithography is used to pattern these layers by applying photoresist, exposing to UV light through a mask, and etching away unwanted material. Doping steps introduce N-type or P-type impurities to form transistors. The document discusses comm

Author

Raja Vidya

Language

EN