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Growth of GaN nanowires by direct reaction of Ga with NH3 by Maoqi He; Peizhen Zhou; S.Noor Mohammad; Gary L. Harris; Joshua B. Halpern; Randy Jacobs; Wendy L. Sarney; Lourdes Salamanca-Riba is a Engineering article available to read on EtoBox.

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Semiconducting, single crystal wurtzite GaN nanowires have been grown by direct reaction of metal Ga with NH 3 in a tube furnace. This paper discusses the growth mechanism. Nanowires grow only between 8251C and 925 o C. Their diameters vary between 20 and 150 nm and depend directly on temperature and NH 3 flow rate. Wires as long as 500 mm have been fabricated; once wires have formed, their length increases directly with time in the reactor. There are three different stages in the process, each of which has its own mechanism. First, a nearly amorphous GaN matrix forms, followed by growth of hillocks of thin GaN platelets. Finally, nanowires emerge from the edges of the platelets in characteristic directions. This analysis can be used as a guide for controlling GaN wire diameters and lengths. Strategies for growth of thinner and thicker nanowires are suggested. Thicker cylindrical structures denoted as rods grow from the face of the platelets. Description of their growth mechanism requires further study.

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Author

Maoqi He; Peizhen Zhou; S.Noor Mohammad; Gary L. Harris; Joshua B. Halpern; Randy Jacobs; Wendy L. Sarney; Lourdes Salamanca-Riba

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2001

Language

EN

Field

Engineering (Physical Sciences)