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About this Engineering article
Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching by Hsien-Chin Chiu, ; Shih-Cheng Yang, ; Feng-Tso Chien, ; Yi-Jen Chan, is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hsien-Chin Chiu, ; Shih-Cheng Yang, ; Feng-Tso Chien, ; Yi-Jen Chan,
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)
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