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Organic Thin-film Transistors Using Thin Ormosil-based Hybrid Dielectric by Sunho Jeong; Dongjo Kim; Sul Lee; Bong Kyun Park; Jooho Moon is a Engineering article available to read on EtoBox.

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We synthesized a novel thermally-crosslinkable ormosil-based hybrid material as a solution-processable dielectric layer for organic thin-film transistors (OTFTs). Dielectrics with a thickness of 50-260 nm were fabricated via spin-coating in order to evaluate their applicability as an ultrathin gate dielectric. It was observed that the capacitance of the hybrid dielectric increases with decreasing film thickness. Hybrid dielectrics with a thickness of 260 nm and 160 nm, respectively, exhibited adequate leakage current behavior. Coplanar-type OTFTs were fabricated using each of the hybrid dielectrics (i.e., thickness of 260 nm and 160 nm). The off-current, threshold voltage, and field-effect mobility of both transistors were analyzed to investigate the effects of capacitance and film thickness on the electrical performance of the transistors.

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Author

Sunho Jeong; Dongjo Kim; Sul Lee; Bong Kyun Park; Jooho Moon

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2007

Language

EN

Field

Engineering (Physical Sciences)