About this scholarly article

AIP Conference Proceedings [AIP THE THIRD NANOSCIENCE AND NANOTECHNOLOGY SYMPOSIUM 2010 (NNSB2010) - Bandung, (Indonesia) (16–16 June 2010)] - Parallel-Perpendicular Kinetic Energy Coupling Effect on Electron Tunneling Currents in Al∕HfO[sub 2]∕p-Ge and Al∕SiO[sub 2]∕p-Si MOS Diodes with Nanometer-Thick Oxides by Hasanah, Lilik; Murakami, Hideki; Khairurrijal, ; Miyazaki, Seiichi; Abdullah, Mikrajuddin; Khairurrijal, is a scholarly article available to read on EtoBox.

Author

Hasanah, Lilik; Murakami, Hideki; Khairurrijal, ; Miyazaki, Seiichi; Abdullah, Mikrajuddin; Khairurrijal,

Publisher

AIP

Published

2010

Language

EN