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Bicmos Technology Improvements For Microwave Application by khnnaa is a document available to read on EtoBox.
The third generation of NXP 0. Um SiGe BiCMOS technology (QUBiC4Xi) is presented. The high-voltage NPN has 12 V BVcb0, and fT / fmax of 216 / 177 GHz. Emphasis was placed on the base link region, the emitter-base spacer in particular and the SiGe:C layer stack.
- Author
- khnnaa
- Language
- EN