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About this Engineering article
Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C by Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2014
- Language
- EN
- Field
- Engineering (Physical Sciences)
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