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Response of Sputtered Titanium Films on Silicon to Thermal Oxidation by Y.L. Brama; Y. Sun; S.R.K. Dangeti; M. Mujahid is a Engineering article available to read on EtoBox.

What is Response of Sputtered Titanium Films on Silicon to Thermal Oxidation about?

Rutile-TiO 2 films have been fabricated by thermal oxidation of titanium films, which were deposited on silicon (100) wafers using dc magnetron sputtering technique. The thermal oxidation response of titanium films with varying thickness from 450 nm to 1140 nm was investigated in the oxidation temperature range of 600 8C to 900 8C, in terms of phase evolution, interface structure and film-substrate adhesion. It was found that the thickness of the titanium film significantly influenced its response to thermal oxidation treatment. Thinner films had better response to thermal oxidation at all investigated temperatures and times, such that an adherent rutile film could be produced on silicon. The critical thickness for achieving adherent oxidised films was approximately 570 nm. Film spallation was observed after oxidation of thicker films (i.e. 770 and 1140 nm). X-ray diffraction and electron probe microanalysis revealed that titanium silicides formed in the film-substrate interfacial region during the oxidation process. Microscratch tests showed that the adhesion of the film to the silicon substrate was deteriorated after thermal oxidation. The evolution of the rutile phase and the fo

Who reads Response of Sputtered Titanium Films on Silicon to Thermal Oxidation?

Author

Y.L. Brama; Y. Sun; S.R.K. Dangeti; M. Mujahid

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0257-8972)

Published

2005

Language

EN

Field

Engineering (Physical Sciences)