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Performance Comparisons of Tunneling Fie by rajeevsachan25 is a document available to read on EtoBox.
This document presents a comparative analysis of Tunneling Field-Effect Transistors (TFETs) made from InSb, Carbon, and GaSb-InAs broken gap heterostructures using an atomistic quantum transport simulator. The study finds that GaSb-InAs structures achieve the highest ON-currents and ON-OFF ratios, while InSb and Carbon-based devices exhibit lower performance despite their ability to operate at lower supply voltages. The results emphasize the importance of device configuration and doping concentration in opt
- Author
- rajeevsachan25
- Language
- EN