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Can I read Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead on EtoBox?
Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead by Robin C.J. Wang; K.S. Chang-Liao; T.K. Wang; C.C. Lee; J.H. Lin; A.S. Oates; S.C. Lee; Kenneth Wu is a Engineering article available to read on EtoBox.
What is Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead about?
In this work, copper stress-induced voiding (SIV) at narrow metal finger connected with wide lead is investigated. Three failure modes are explored and discussed with different failure sites. A driving force for void migration resulted from hydrostatic stress gradient is also studied. Meanwhile, in order to assess the impact of copper void on multi-level interconnects, a model based on finite element analysis (FEA) is developed to simulate the resistance change with regard to voiding location, void morphology and interconnect scenario. Finally, a correlation between SIV and resistance change is obtained, which can serve as references for reliability evaluation and risk assessment.
Who reads Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Robin C.J. Wang; K.S. Chang-Liao; T.K. Wang; C.C. Lee; J.H. Lin; A.S. Oates; S.C. Lee; Kenneth Wu
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)