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Can I read Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead on EtoBox?

Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead by Robin C.J. Wang; K.S. Chang-Liao; T.K. Wang; C.C. Lee; J.H. Lin; A.S. Oates; S.C. Lee; Kenneth Wu is a Engineering article available to read on EtoBox.

What is Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead about?

In this work, copper stress-induced voiding (SIV) at narrow metal finger connected with wide lead is investigated. Three failure modes are explored and discussed with different failure sites. A driving force for void migration resulted from hydrostatic stress gradient is also studied. Meanwhile, in order to assess the impact of copper void on multi-level interconnects, a model based on finite element analysis (FEA) is developed to simulate the resistance change with regard to voiding location, void morphology and interconnect scenario. Finally, a correlation between SIV and resistance change is obtained, which can serve as references for reliability evaluation and risk assessment.

Who reads Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead?

It is typically read by researchers, students, and practitioners in Engineering.

Author
Robin C.J. Wang; K.S. Chang-Liao; T.K. Wang; C.C. Lee; J.H. Lin; A.S. Oates; S.C. Lee; Kenneth Wu
Publisher
Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
Published
2007
Language
EN
Field
Engineering (Physical Sciences)

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