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About this Engineering article
Improvement of SiN x :H/InP gate structures for the fabrication of metal insulator semiconductor field-effect transistors by Redondo, E; M rtil, I; D az, G Gonz lez; Fern ndez, P; Cimas, R is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Redondo, E; M rtil, I; D az, G Gonz lez; Fern ndez, P; Cimas, R
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)
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