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About this Engineering article
Effects of arsenic concentration on the formation of dislocation loops near the projected ion range in high-dose As+-implanted (001) Si by Hsu, S. N.; Chen, L. J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hsu, S. N.; Chen, L. J.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1989
- Language
- EN
- Field
- Engineering (Physical Sciences)