Can I read Doped Semiconductors with Band-edge Plasma Frequencies on EtoBox?

Doped Semiconductors with Band-edge Plasma Frequencies by Stephanie Law; Runyu Liu; Daniel Wasserman is a Engineering article available to read on EtoBox.

What is Doped Semiconductors with Band-edge Plasma Frequencies about?

In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping concentrations over an order of magnitude larger than previously published results and show that such materials have plasma frequencies corresponding to energies larger than the material's band-gap. These semiconductor-based plasmonic metals open the door to homoepitaxial integration of plasmonic or epsilon-near-zero materials with optoelectronic devices at mid-infrared wavelengths. The materials are characterized by Hall measurements, mid-infrared transmission and reflection spectroscopy, and near-infrared transmission spectroscopy. The opportunities offered and the limitations presented by this material system are discussed and analyzed.

Who reads Doped Semiconductors with Band-edge Plasma Frequencies?

Author

Stephanie Law; Runyu Liu; Daniel Wasserman

Publisher

American Vacuum Society

Published

2014

Language

EN

Field

Engineering (Physical Sciences)