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This document provides specifications for a silicon NPN triple diffused planar transistor. It lists the absolute maximum ratings such as collector-base voltage of 300V and collector current of 6A. It also lists the electrical characteristics at 25°C including minimum hFE of 2000, maximum VCE(sat) of 1.5V, and minimum breakdown voltage of 250V. Finally, it includes a diagram showing the external dimensions of the transistor in a TO-220F package.

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