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Reliability aspects of Hf-based capacitors: Breakdown and trapping effects by R. Duschl; M. Kerber; A. Avellan; S. Jakschik; U. Schroeder; S. Kudelka is a Engineering article available to read on EtoBox.

Dielectric breakdown and trapping effects are of serious concern for high-k dielectrics. In this paper acceleration models for dielectric breakdown and leakage current degradation in HfSiO films thicker 10 nm are introduced and the mechanism for leakage current increase during constant voltage stress is evaluated.

It is typically read by researchers, students, and practitioners in Engineering.

Author
R. Duschl; M. Kerber; A. Avellan; S. Jakschik; U. Schroeder; S. Kudelka
Publisher
Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
Published
2007
Language
EN
Field
Engineering (Physical Sciences)