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About this scholarly article
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - A lateral insulated gate bipolar transistor employing the self-align sidewall implanted n/sup +/ source by Byeon, D.S.; Lee, B.H.; Kim, D.Y.; Han, M.K.; Coi, Y.I.; Yun, C.M. is a scholarly article available to read on EtoBox.
- Author
- Byeon, D.S.; Lee, B.H.; Kim, D.Y.; Han, M.K.; Coi, Y.I.; Yun, C.M.
- Publisher
- IEEE
- Published
- 1998
- Language
- EN
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