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About this Engineering article
Boron incorporation in Si1−xGex films grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4 by Chen, L. P.; Chou, C. T.; Huang, G. W.; Tsai, W. C.; Chang, C. Y. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Chen, L. P.; Chou, C. T.; Huang, G. W.; Tsai, W. C.; Chang, C. Y.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1995
- Language
- EN
- Field
- Engineering (Physical Sciences)