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About this Engineering article
Partitioned gate tunnelling current model considering distributed effect for CMOS devices with ultra-thin (1 nm) gate oxide by Lin, C.H.; Kuo, J.B.; Su, K.W.; Liu, S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Lin, C.H.; Kuo, J.B.; Su, K.W.; Liu, S.
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 2006
- Field
- Engineering (Physical Sciences)