Opening book details…
About this Engineering article
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs by He, Jiabei; Wei, Jin; Yang, Song; Wang, Yuru; Zhong, Kailun; Chen, Kevin J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- He, Jiabei; Wei, Jin; Yang, Song; Wang, Yuru; Zhong, Kailun; Chen, Kevin J.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2019
- Field
- Engineering (Physical Sciences)
More by He, Jiabei; Wei, Jin; Yang, Song; Wang, Yuru; Zhong, Kailun; Chen, Kevin J.
Browse all works by He, Jiabei; Wei, Jin; Yang, Song; Wang, Yuru; Zhong, Kailun; Chen, Kevin J.