About this scholarly article

68th Device Research Conference - Influence of crystal orientation on the current gain in 4H-SiC BJTs by Ghandi, R.; Bouno, B.; Domeij, M.; Shayestehaminzadeh, S.; Zetterling, C-M.; Ostling, M. is a scholarly article available to read on EtoBox.

Author

Ghandi, R.; Bouno, B.; Domeij, M.; Shayestehaminzadeh, S.; Zetterling, C-M.; Ostling, M.

Publisher

IEEE

Published

2010

Language

EN