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Pressure‐induced metallization and structural evolution of Cu~3~N by J. G. Zhao; L. X. Yang; Y. Yu; S. J. You; J. Liu; C. Q. Jin is a Physics and Astronomy article available to read on EtoBox.

What is Pressure‐induced metallization and structural evolution of Cu~3~N about?

## Abstract In situ resistance evolution with pressure of anti‐perovskite nitride Cu~3~N was measured using the diamond anvil cell (DAC) technique up to 20.0 GPa at room temperature. A sharp drop of resistance from 10^5^ Ω at ambient pressure to several Ω was observed in the range 3.0–10.0 GPa. This is an indication of the pressure‐induced metallization in the Cu~3~N semiconductor. Meanwhile we also performed the high‐pressure energy dispersive X‐ray diffraction experiments on Cu~3~N at the pressures up to 39.2 GPa. It was found that a crystal structure phase transition begins to take place at ∼5.0 GPa on Cu~3~N, which is generally consistent with the electronic conductance results. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads Pressure‐induced metallization and structural evolution of Cu~3~N?

Author

J. G. Zhao; L. X. Yang; Y. Yu; S. J. You; J. Liu; C. Q. Jin

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

2006

Language

EN

Field

Physics and Astronomy (Physical Sciences)