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About this Engineering article
Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations by Kim, Seonghyun ;Park, Jubong ;Jung, Seungjae ;Lee, Wootae ;Woo, Jiyong ;Cho, Chunhum ;Siddik, Manzar ;Shin, Jungho ;Park, Sangsu ;Hun Lee, Byoung ;Hwang, Hyunsang is a Engineering article available to read on EtoBox.
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- Author
- Kim, Seonghyun ;Park, Jubong ;Jung, Seungjae ;Lee, Wootae ;Woo, Jiyong ;Cho, Chunhum ;Siddik, Manzar ;Shin, Jungho ;Park, Sangsu ;Hun Lee, Byoung ;Hwang, Hyunsang
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2011
- Language
- EN
- Field
- Engineering (Physical Sciences)