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This paper presents a cost-effective solution-based method for synthesizing continuous nano-crystalline cadmium sulfide (CdS) thin films, which are utilized to fabricate n-type thin film transistors (TFTs) with promising electrical performance. The method eliminates the need for nanoparticle synthesis and high vacuum systems, allowing for efficient precursor usage and reduced chemical waste. The resulting TFTs exhibit a field effect mobility of 0.55 cm²/V·s, a threshold voltage of 8.4 V, and an on/off curre

Author

Nisha

Language

EN