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About this Engineering article
Epitaxial GaN films with ultralow threading dislocation densities grown on an SiO2-masked patterned sapphire substrate by Xing, Kun; Wang, Jiangtao; Wang, Liancheng; Tao, Xiao; Chen, Shirong; Liang, Huaguo is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Xing, Kun; Wang, Jiangtao; Wang, Liancheng; Tao, Xiao; Chen, Shirong; Liang, Huaguo
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; Japan Soc of Applied Physics; IOP Publishing (ISSN 1882-0778)
- Published
- 2019
- Field
- Engineering (Physical Sciences)