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What is Enhanced GaAs PHEMT T/R Switch Design about?

The document discusses the design and fabrication of Single Pole Double Throw (SPDT) switches using 0.6µm gate length pHEMTs with various gate configurations, demonstrating improved power handling and isolation. The results indicate that switches with a triple-gate configuration are optimal for achieving 30 dBm output power at 2.4 GHz while balancing layout space and performance. Overall, the multi-gate structure enhances handling power and improves linearity in the switch

Author

xiadongseu

Language

EN