About this scholarly article

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) - The interaction of hot electrons and hot holes on the degradation of P-channel metal oxide semiconductor field effect transistors by Yang, Z.J.; Guarin, F.J.; Rauch, S.E. is a scholarly article available to read on EtoBox.

Author

Yang, Z.J.; Guarin, F.J.; Rauch, S.E.

Publisher

IEEE

Published

2002

Language

EN