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Can I read Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs on EtoBox?
Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs by S. Put; H. Mehta; N. Collaert; M. Van Uffelen; P. Leroux; C. Claeys; N. Lukyanchikova; E. Simoen is a Engineering article available to read on EtoBox.
What is Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs about?
In this work the influence of Selective Epitaxial Growth (SEG), high-k gate-dielectric and rotation of the channel on the low frequency (LF)-noise is investigated. The carrier number fluctuations dominate the 1/f noise for all the devices studied. An unusual effective trap density profile is found. It decays with a larger distance from the interface. This implies a higher trap density in the interfacial SiO 2 -layer, compared with the high-k dielectric. The shape of the profile is different for a HfSiON gate-dielectric compared with a HfO 2 gate-dielectric. Higher trap densities are found for the latter. The Selective Epitaxial Growth (SEG) and channel orientation show only a negligible impact on the noise behavior when a HfSiONdielectric is used.
Who reads Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- S. Put; H. Mehta; N. Collaert; M. Van Uffelen; P. Leroux; C. Claeys; N. Lukyanchikova; E. Simoen
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)