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Proton-Induced Transient Charge Collection in GaAs and InAlSb/InAs-Based FETs by Warner, Jeffrey H.; McMorrow, Dale; Buchner, Stephen; Boos, J. Brad; Roche, Nicolas; Paillet, Philippe; Gaillardin, Marc; Blackmore, Ewart; Trinczek, Michael; Ramachandran, Vishwa; Reed, Robert A.; Schrimpf, Ronald D. is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
Warner, Jeffrey H.; McMorrow, Dale; Buchner, Stephen; Boos, J. Brad; Roche, Nicolas; Paillet, Philippe; Gaillardin, Marc; Blackmore, Ewart; Trinczek, Michael; Ramachandran, Vishwa; Reed, Robert A.; Schrimpf, Ronald D.
Publisher
IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9499)
Published
2013
Language
EN
Field
Engineering (Physical Sciences)

More by Warner, Jeffrey H.; McMorrow, Dale; Buchner, Stephen; Boos, J. Brad; Roche, Nicolas; Paillet, Philippe; Gaillardin, Marc; Blackmore, Ewart; Trinczek, Michael; Ramachandran, Vishwa; Reed, Robert A.; Schrimpf, Ronald D.

Browse all works by Warner, Jeffrey H.; McMorrow, Dale; Buchner, Stephen; Boos, J. Brad; Roche, Nicolas; Paillet, Philippe; Gaillardin, Marc; Blackmore, Ewart; Trinczek, Michael; Ramachandran, Vishwa; Reed, Robert A.; Schrimpf, Ronald D.