About this scholarly article

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Gate oxide reliability of 4H-SiC V-groove trench MOSFET under various stress conditions by Hiyoshi, Toru; Uchida, Kosuke; Sakai, Mitsuhiko; Furumai, Masaki; Tsuno, Takashi; Mikamura, Yasuki is a scholarly article available to read on EtoBox.

Author

Hiyoshi, Toru; Uchida, Kosuke; Sakai, Mitsuhiko; Furumai, Masaki; Tsuno, Takashi; Mikamura, Yasuki

Publisher

IEEE

Published

2016