About this Physics and Astronomy article
Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics by Rybalka, S.B.; Krayushkina, E.Yu.; Demidov, A.A.; Shishkina, O.A.; Surin, B.P. is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Rybalka, S.B.; Krayushkina, E.Yu.; Demidov, A.A.; Shishkina, O.A.; Surin, B.P.
- Publisher
- Science Publishing Corporation (ISSN 2307-9010)
- Published
- 2017
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)