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About this Materials Science article
Preferential growth of μc-Ge : H along the crystallographic axes of Si and Ge substrates by ECR plasma CVD by S. Kobayashi; T. Shimizu; T. Aoki; T. Asakawa is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- S. Kobayashi; T. Shimizu; T. Aoki; T. Asakawa
- Publisher
- Springer US; Springer-Verlag; Kluwer Academic Publishers; Springer Science and Business Media LLC; Society for Mining, Metallurgy and Exploration Inc. (ISSN 0957-4522)
- Published
- 2003
- Field
- Materials Science (Physical Sciences)
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