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RF-magnetron-sputtered heteroepitaxial YSZ and CeO2/YSZ/Si(0 0 1) thin films with improved capacitance–voltage characteristics by Naoki Wakiya; Makoto Yoshida; Takanori Kiguchi; Kazuo Shinozaki; Nobuyasu Mizutani is a Engineering article available to read on EtoBox.

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Heteroepitaxial yttria-stabilized zirconia (YSZ) and CeO yYSZ thin films were prepared on Si(0 0 1) by radio frequency (RF)-2 magnetron sputtering using a combination of metal (ZrqY), YSZ ceramic and CeO ceramic targets. Optimal crystallinity and 2 minimal surface roughness were obtained for a 2-nm thick layer of metallic (ZrqY). For YSZ thin film, a considerably large threshold hysteresis (memory window) of approximately 2.2 V was observed in the capacitance-voltage characteristics. It was clarified that the memory window can be suppressed by decreasing the thickness of YSZ. The memory window of CeO (90 nm 2 thick)yYSZ(5 nm thick) thin film was reduced to 0.4 V.

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Author

Naoki Wakiya; Makoto Yoshida; Takanori Kiguchi; Kazuo Shinozaki; Nobuyasu Mizutani

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2002

Language

EN

Field

Engineering (Physical Sciences)