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About this Engineering article
Charge Trapping and Polarity Dependence of Interface State Generation in Nitrided Oxide Gate Dielectric by Electron Photoinjection by Eccleston, W.; Mi, J.; Marsland, J.S.; Bouvet, D.; Dutoit, M.; Yuan, X.-J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Eccleston, W.; Mi, J.; Marsland, J.S.; Bouvet, D.; Dutoit, M.; Yuan, X.-J.
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 1994
- Language
- EN
- Field
- Engineering (Physical Sciences)