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Relation Between Structure, Morphology and Optical Properties of Indium Sulphide Thin Films Prepared by Different Vacuum Methods by C. Guillén is a Materials Science article available to read on EtoBox.

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## Abstract Indium sulphide thin films were synthesized following two different vacuum physical processes, modulated flux deposition and sequential evaporation, with thicknesses ranging between 40 and 250 nm, at temperatures as low as 200 °C. The samples were characterized using X‐ray diffraction, spectrophotometry and atomic force microscopy. All films crystallized in the tetragonal β‐In~2~S~3~ structure, showing small crystallite size and compressive lattice distortion for the thinnest layers, which progress towards larger crystallites and lattice extension when the thickness increases. Such evolution is found to be different for samples prepared by direct or sequential processes. Relations between lattice stress, surface roughness and band gap energy values were analysed for the different layers. It is established that band gap widening is related to compressive strain and low roughness conditions, which are better achieved by modulated flux deposition. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author

C. Guillén

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)

Published

2007

Language

EN

Field

Materials Science (Physical Sciences)