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Photoluminescence and carrier transport properties via the intersubband scattering in a GaAs/AlAs superlattice under applied electric field by M Ando; M Nakayama; H Takeuchi; H Nishimura; N Ohtani; N Egami; M Hosoda; H Mimura is a Materials Science article available to read on EtoBox.
What is Photoluminescence and carrier transport properties via the intersubband scattering in a GaAs/AlAs superlattice under applied electric field about?
We report on the photoluminescence and carrier-transport properties of a GaAs(6.2 nm)/AlAs(1.7 nm) superlattice embedded in a p}i}n diode structure from the viewpoint of the intersubband scattering under an applied bias voltage (electric "eld). We have found the enhancement of the photoluminescence intensity in the reverse-bias region from 4 to 16 V, accompanying a dip structure. The transient photocurrent simultaneously exhibits delayed-transport pro"les in the above bias region. The calculated results of the energies of the 1, 2 and X1 subbands indicate that the electron scattering between the and the X subbands causes the above experimental results.
Who reads Photoluminescence and carrier transport properties via the intersubband scattering in a GaAs/AlAs superlattice under applied electric field?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- M Ando; M Nakayama; H Takeuchi; H Nishimura; N Ohtani; N Egami; M Hosoda; H Mimura
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-2313)
- Published
- 2000
- Language
- EN
- Field
- Materials Science (Physical Sciences)