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Identifying Defect-Induced Trion in Monolayer WS~2~ via Carrier Screening Engineering by Riya Sebait; Chandan Biswas; Bumsub Song; Changwon Seo; Young Hee Lee is a Engineering article available to read on EtoBox.

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Unusually high exciton binding energies (BEs), as much as ∼1 eV in monolayer transition-metal dichalcogenides, provide opportunities for exploring exotic and stable excitonic many-body effects. These include many-body neutral excitons, trions, biexcitons, and defect-induced excitons at room temperature, rarely realized in bulk materials. Nevertheless, the defect-induced trions correlated with charge screening have never been observed, and the corresponding BEs remain unknown. Here we report defect-induced A-trions and B-trions in monolayer tungsten disulfide (WS 2 ) via carrier screening engineering with photogenerated carrier modulation, external doping, and substrate scattering. Defect-induced trions strongly couple with inherent SiO 2 hole traps under high photocarrier densities and become more prominent in rhenium-doped WS 2 . The absence of defect-induced trion peaks was confirmed using a trap-free hexagonal boron nitride substrate, regardless of power density. Moreover, many-body excitonic charge states and their BEs were compared via carrier screening engineering at room temperature. The highest BE was observed in the defect-induced A-trion state (∼214 meV), comparably highe

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Author

Riya Sebait; Chandan Biswas; Bumsub Song; Changwon Seo; Young Hee Lee

Publisher

American Chemical Society (ACS)

Published

2021

Language

EN

Field

Engineering (Physical Sciences)