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Dynamic Dielectric Function in the Three-Band Model for Zero-Gap Semiconductors in a Magnetic Field by P. Kacman; J. Blinowski; M. Grynberg is a Physics and Astronomy article available to read on EtoBox.
What is Dynamic Dielectric Function in the Three-Band Model for Zero-Gap Semiconductors in a Magnetic Field about?
## Abstract The energies of the magnetic subbands associated with conduction and valence Γ~8~ bands in zero‐gap semiconductors are calculated analytically in the three‐band model corrected by first‐order perturbation theory to account for the effect of higher bands. Based on the obtained eigenvalues and eigenfunctions both, the imaginary and real parts of Γ~8~→Γ~8~ intra‐and interband contributions to the dynamic dielectric function (DDF) are evaluated in collisionless approximation. The influence of frequency and magnetic field dependence of DDF on the reflection coefficient in intrinsic and n‐type samples at __T__ = 0 is presented.
Who reads Dynamic Dielectric Function in the Three-Band Model for Zero-Gap Semiconductors in a Magnetic Field?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- P. Kacman; J. Blinowski; M. Grynberg
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)
- Published
- 1978
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)