Skip to content

Opening book details…

About this Engineering article

Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates by M. J. Manfra; N. G. Weimann; J. W. P. Hsu; L. N. Pfeiffer; K. W. West; S. N. G. Chu is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
M. J. Manfra; N. G. Weimann; J. W. P. Hsu; L. N. Pfeiffer; K. W. West; S. N. G. Chu
Publisher
American Institute of Physics; AIP Publishing (ISSN 0003-6951)
Published
2002
Language
EN
Field
Engineering (Physical Sciences)

More by M. J. Manfra; N. G. Weimann; J. W. P. Hsu; L. N. Pfeiffer; K. W. West; S. N. G. Chu

Browse all works by M. J. Manfra; N. G. Weimann; J. W. P. Hsu; L. N. Pfeiffer; K. W. West; S. N. G. Chu