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Boron Doping Effects on Contact Resistance by hakimkorichi is a document available to read on EtoBox.
This study investigates the impact of boron doping profiles on the specific contact resistance (ρC) of screen-printed Ag–Al contacts on silicon solar cells. It finds that deeper junctions lead to lower ρC values, with measurements showing a decrease from approximately 4 mΩ cm² to 2 mΩ cm² as junction depth increases from 570 nm to 980 nm. The research highlights the significance of dopant concentration and crystallite penetration depth in achieving low contact resistance in solar cell applications.
- Author
- hakimkorichi
- Language
- EN