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About this Engineering article
InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator by Gucmann, F.; Gregušová, D.; Stoklas, R.; Dérer, J.; Kúdela, R.; Fröhlich, K.; Kordoš, P. is a Engineering article available to read on EtoBox.
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- Author
- Gucmann, F.; Gregušová, D.; Stoklas, R.; Dérer, J.; Kúdela, R.; Fröhlich, K.; Kordoš, P.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2014
- Language
- EN
- Field
- Engineering (Physical Sciences)