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About this Engineering article
Molecular beam epitaxy growth and characterization of GaN and AlxGa1−xN on 6H-SiC by Sinharoy, S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Sinharoy, S.
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
- Published
- 1996
- Language
- EN
- Field
- Engineering (Physical Sciences)