About this document
US20120051137A1 by rkshjainn is a document available to read on EtoBox.
The document describes a patent application for a 3D memory device that incorporates a memory architecture featuring ridge-shaped stacks of semiconductor material strips and orthogonal word lines. This design aims to enhance storage capacity and reduce manufacturing costs by creating a three-dimensional array of memory cells. The memory elements are accessible through a combination of bit lines, source lines, and word lines, with diodes integrated into the structure for improved functionality.
- Author
- rkshjainn
- Language
- EN