Opening book details…
About this scholarly article
52nd Annual Device Research Conference - Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system by Shen, J.; Kramer, G.; Tehrani, S.; Goronkin, H.; Zhu, T.; Tsui, R. is a scholarly article available to read on EtoBox.
- Author
- Shen, J.; Kramer, G.; Tehrani, S.; Goronkin, H.; Zhu, T.; Tsui, R.
- Publisher
- IEEE
- Published
- 1994
- Language
- EN
More by Shen, J.; Kramer, G.; Tehrani, S.; Goronkin, H.; Zhu, T.; Tsui, R.
Browse all works by Shen, J.; Kramer, G.; Tehrani, S.; Goronkin, H.; Zhu, T.; Tsui, R.