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What is 06 Sample Document about?
The document discusses the challenges and advancements in Static Random Access Memory (SRAM) technology, particularly in relation to power dissipation and reliability in ultra-scale technologies. It highlights the issues of leakage, read/write loss, and multi-bit soft errors, while proposing new SRAM cell designs (11T cells) to improve performance without relying on traditional assist techniques. The thesis is organized into multiple chapters, covering various aspects of SRAM architecture, operation, and pe
- Author
- durgaswathibandaru
- Language
- EN