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Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study by S. Sayan; R. A. Bartynski; X. Zhao; E. P. Gusev; D. Vanderbilt; M. Croft; M. Banaszak Holl; E. Garfunkel is a Physics and Astronomy article available to read on EtoBox.

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## Abstract The densities of states above and below the Fermi energy for the ZrO~2~/SiO~__x__~N~__y__~/n‐Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO~2~ is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study?

Author

S. Sayan; R. A. Bartynski; X. Zhao; E. P. Gusev; D. Vanderbilt; M. Croft; M. Banaszak Holl; E. Garfunkel

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

2004

Language

EN

Field

Physics and Astronomy (Physical Sciences)