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The document discusses the future of copper interconnects in semiconductor technology, highlighting the challenges posed by resistance and capacitance as devices scale down. Alternatives like ruthenium and molybdenum are being explored, with a potential shift to subtractive metallization processes anticipated after the 2nm node. Innovations such as backside power delivery and self-assembled monolayers are being developed to enhance performance and address engineering challenges in extending copper interconn

Author

xhaiyu1212

Language

EN