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About this Engineering article
Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location by Z.-Q. Fang; B. Claflin; D.C. Look is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Z.-Q. Fang; B. Claflin; D.C. Look
- Publisher
- Springer US; Springer-Verlag; Springer New York LLC; Springer Science and Business Media LLC (ISSN 0361-5235)
- Published
- 2011
- Field
- Engineering (Physical Sciences)