Can I read Surface reaction processes in C4F8 and C5F8 plasmas for selective etching of SiO2 over photo-resist on EtoBox?

Surface reaction processes in C4F8 and C5F8 plasmas for selective etching of SiO2 over photo-resist by Hideki Motomura; Shin-ichi Imai; Kunihide Tachibana is a Engineering article available to read on EtoBox.

What is Surface reaction processes in C4F8 and C5F8 plasmas for selective etching of SiO2 over photo-resist about?

Surface reactions induced by fluorocarbon plasmas were studied on Si substrates with SiO and photo-resist overlayers using 2 an inductively coupled plasma source. As source gases, C F and C F were employed to investigate their differences in the 4 8 5 8 etching performance and the selectivity between SiO and photo-resist. Deposition of fluorocarbon polymer was noticed in both 2 gases by Fourier-transform infrared ellipsometric measurements when substrate bias was not applied. With the bias application, etching started on both substrate from certain threshold values of the bias voltage and the rate increased with increase of the voltage. However, in C F plasma the increasing tendency on photo-resist was much less than on SiO , while in C F plasma the 5 8 2 48 difference is small. This difference is attributed to a larger deposition ability of C F plasma with higher content of fluorine 5 8 atoms in the polymer than that of C F plasma as confirmed by X-ray photoelectron spectroscopy. ᮊ 2001 Elsevier Science B.V. 4 8 All rights reserved.

Who reads Surface reaction processes in C4F8 and C5F8 plasmas for selective etching of SiO2 over photo-resist?

Author

Hideki Motomura; Shin-ichi Imai; Kunihide Tachibana

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2001

Language

EN

Field

Engineering (Physical Sciences)