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About this Engineering article
MOS power transistor model for Electromagnetic Susceptibility analysis by C. Bona; F. Fiori is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C. Bona; F. Fiori
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 2011
- Field
- Engineering (Physical Sciences)