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An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure by Toshihiro Ohki; Toshihide Kikkawa; Masahito Kanamura; Kenji Imanishi; Kozo Makiyama; Naoya Okamoto; Kazukiyo Joshin; Naoki Hara is a Engineering article available to read on EtoBox.

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## Abstract A novel piezoelectric‐induced cap structure in an AlGaN/GaN high electron mobility transistor (HEMT) was developed for enhancement‐mode (E‐mode) operation with high maximum drain current density (__I~dmax~__), high breakdown voltage (__BV~gd~__) and small current collapse. Our developed cap structure consists of a thin GaN/AlN/ GaN triple‐layer, which reduces the sheet resistance (__R~sh~__) due to conduction band bending. The threshold voltage (__V~th~__) is +0.25 V with a high __I~dmax~__ of 520 mA/mm, a high __BV~gd~__ of 336 V and small current collapse by using the developed cap structure and a gate recess technique. The single‐chip AlGaN/GaN E‐mode HEMT amplifier achieved a high output power of 126 W at 2.5 GHz with improved distortion characteristics. This is the first report of an AlGaN/GaN E‐mode HEMT with an output power of over 100 W. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author

Toshihiro Ohki; Toshihide Kikkawa; Masahito Kanamura; Kenji Imanishi; Kozo Makiyama; Naoya Okamoto; Kazukiyo Joshin; Naoki Hara

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2009

Language

EN

Field

Engineering (Physical Sciences)